Лаборатория ядерных реакций им. Г. Н. Флерова

Общелабораторный семинар

Дата и время: пятница, 22 августа 2025 г., в 11:00

Место: Конференц-зал, Лаборатория ядерных реакций им. Г. Н. Флерова

1. Тема семинара: «Единственная установка с ионным микролучевым излучением GeV в Ланьчжоу»

   Докладчик: Гуанхуа Ду (Институт современной физики Китайской академии наук)

   Аннотация:

   High energy heavy ions cause lattice damage, polymer chain break or cross-linking in the material and then result in nanoscale latent track, cluster damage and single event effect mainly by intense electronic excitation. A high energy ion microbeam facility allows micro-irradiation and ion beam imaging to study the spatial distribution of radiation effect in microelectronics, solids, and biological samples. Based on the beam provided by the sector focusing cyclotron and separated sector cyclotron of the Heavy Ion Research Facility in Lanzhou (HIRFL), a focusing ion microbeam facility with single ion hit technique was constructed for beam with an energy range from several MeV/u up to 80 MeV/u (0.4 GeV Nickel, 1.0 GeV Carbon or 2.2 GeV Krypton beam). The microbeam’s vertical end station and external focus in air facilitates to irradiate living samples and large-scale microelectronics system with complicated peripherial connections. The seminar will cover the technical development and the interdisciplinary application of the high energy microbeam facility, including single event effect imaging, single ion nanofabrication, and biomedical studies.

2. Тема семинара: «Эффекты облучения полупроводниковых материалов и устройств c широкой запрещенной зоной быстрыми тяжелыми ионами»

   Докладчик: Цзе Лю (Институт современной физики Китайской академии наук)

   Аннотация:

   The wide bandgap semiconductor materials, such as SiC, GaN and Ga2O3, have excellent physical properties. The wide bandgap devices based on these materials show obvious advantages in high-voltage, high-frequency, high-temperature, and have great potential application in space. However, it was found that the wide bandgap power devices are very sensitive to heavy ion irradiation, which limits the application under radiation environments. This work summarises the results of irradiation effects of heavy ions in SiC, GaN, and Ga2O3 materials and devices, which were performed in the Heavy Ion Research Facility in Lanzhou (HIRFL). The ion tracks were observed by HRTEM in these semiconductor materials and the devices with or without high voltage. These material damage caused the electrical property degradation or even failure of the devices. A possible mechanism of failure of power devices under heavy ion irradiation has been proposed.