Response of Timepix pixel detector with GaAs:Cr and Si sensor to heavy ions

Seminars

On 24 December 2015, 11:00, at DLNP Conference hall seminar will be held

S.M.Abu Al Azm, G.Chelkov, D.Kozhevnikov, A.Guskov, A.Lapkin, A.Leyva Fabelo, P.Smolyanskiy, A.Zhemchugov "Response of Timepix pixel detector with GaAs:Cr and Si sensor to heavy ions"

Abstract

The response of the Timepix detector to neon ions with kinetic energy 77 and 158.4 MeV has been studied at the cyclotron U-400M of the Laboratory of Nuclear Reaction. Sensors produced from gallium arsenide compensated by chromium (GaAs:Cr) and from silicon (Si) are used for these measurements. While in Timepix detector with Si sensor the well-known so-called "volcano effect" observed, in Timepix detector with GaAs:Cr sensor such effect was completely absent.

In the report the behaviour of the Timepix detector with GaAs:Cr sensor under irradiation with heavy ions are described in comparison with the detector based on Si sensor. Also the reason for absence of "volcano effect" in GaAs:Cr detector is proposed.