A new patent of JINR

Patents, 07 June 2018

The Licensing and Intellectual Property Department of JINR announces that on 16 April 2018, the Joint Institute for Nuclear Research received a patent for the invention “Cryogenic flange connector for ball cold neutron moderator”. The authors of the work are Mukhin Konstantin Aleksandrovich and Kustov Aleksandr Anatolevich.

JINR staff congratulates the authors on receiving the patent for their invention!

More details about the invention

invention relates to a cryogenic technique, namely to a cryogenic flange detachable connection for a cold neutron moderator, and isintended for transporting substances in any aggregate states at cryogenic temperatures through a transport pipeline into the working chamber of a cold neutron moderator of a nuclear research reactor. Connection is a coaxial cryogenic pipeline. Shell pipeline has a telescopic sliding section with stationary casing parts. Seal at its smaller diameter is provided with a centering ring with a plastic gasket, and on the greaterside – with a pressure flange rotatable about the axis of the pipeline and an annular sealing element with a shape memory, for example a circular rubber gasket. Sliding section of the shell pipeline has the possibility of free running along the axis of the cryogenic pipeline and is connected to a section of a stationary pipeline of smaller diameter by two standard flanges. End of the sliding section on the other hand is free and enters a stationary casing of a larger diameter with a small gap. Detachable part of the inner pipeline consists of two sections of a stationary pipeline of the same diameter. They are butt-jointed using a deformable gasket and fixed by flanges, at least one of which has the ability to rotate around its axis.

EFFECT:technical result consistsin the elimination of freezing, adherence and physical and chemical changes in the transported substance.

Please, pay attention

Before publishing the article on a scientific-technological development, JINR employees may address to the Licensing and Intellectual Property Department for making an application for a patent.

Address: DLNP site, bld.113, 4th floor, rooms 408, 415
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